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Search: "[ keyword: Silicon Carbide (SiC) ]" (4)
Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
Junji Ke Zhibin Zhao Peng Sun Huazhen Huang James Abuogo
Xiang Cui
Vol. 19, No. 4, pp. 1054-1067, Jul. 2019
10.6113/JPE.2019.19.4.1054
Xiang Cui
Vol. 19, No. 4, pp. 1054-1067, Jul. 2019
10.6113/JPE.2019.19.4.1054
Influence of Parasitic Parameters on Switching Characteristics and Layout Design Considerations of SiC MOSFETs
Haihong Qin Ceyu Ma Ziyue Zhu Yangguang Yan
Vol. 18, No. 4, pp. 1255-1267, Jul. 2018
10.6113/JPE.2018.18.4.1255
Vol. 18, No. 4, pp. 1255-1267, Jul. 2018
10.6113/JPE.2018.18.4.1255
A SiC MOSFET Based High Efficiency Interleaved Boost Converter for More Electric Aircraft
Haider Zaman Xiancheng Zheng Mengxin Yang Husan Ali Xiaohua Wu
Vol. 18, No. 1, pp. 23-33, Jan. 2018
10.6113/JPE.2018.18.1.23
Vol. 18, No. 1, pp. 23-33, Jan. 2018
10.6113/JPE.2018.18.1.23
6.6 kW On-Vehicle Charger with a Hybrid Si IGBTs and SiC SBDs Based Booster Power Module
Timothy Junghee Han Jared Preston David Ouwerkerk
Vol. 13, No. 4, pp. 584-591, Jul. 2013
10.6113/JPE.2013.13.4.584
Vol. 13, No. 4, pp. 584-591, Jul. 2013
10.6113/JPE.2013.13.4.584